NTLTD7900ZR2_06 datasheet(1/8 Pages) ONSEMI

Part #	NTLTD7900ZR2

Description	Power MOSFET 9 A, 20 V, Logic Level, N-Channel Micro8 TM Leadless

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March, 2006 − Rev. 6

1

Publication Order Number:

NTLTD7900ZR2/D

NTLTD7900ZR2

Power MOSFET

9 A, 20 V, Logic Level, N−Channel

Micro8] Leadless

EZFETs

™ are an advanced series of Power MOSFETs which

contain monolithic back−to−back Zener diodes. These Zener diodes

provide protection against ESD and unexpected transients. These

miniature surface mount MOSFETs feature ultra low RDS(on) and true

logic level performance. EZFET devices are designed for use in low

voltage, high speed switching applications where power efficiency is

important. Typical applications are DC−DC converters, and power

management in portable and battery powered products such as

computers, printers, cellular and cordless phones.

Features

• Pb−Free Package is Available

Applications

• Zener Protected Gates Provide Electrostatic Discharge Protection

• Designed to Withstand 4000 V Human Body Model

• Ultra Low RDS(on) Provides Higher Efficiency and Extends

Battery Life

• Logic Level Gate Drive − Can be Driven by Logic ICs

• Micro8 Leadless Surface Mount Package − Saves Board Space

• IDSS Specified at Elevated Temperature

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Rating

Symbol

10 Sec

Steady

State

Unit

Drain−to−Source Voltage

VDSS

20

V

Gate−to−Source Voltage

VGS

±12

V

Continuous Drain Current (Note 1)

TA = 25°C

TA = 85°C

ID

9.0

6.4

6.0

4.3

A

Pulsed Drain Current

(tp v 10 ms)

IDM

30

A

Continuous Source−Diode

Conduction (Note 1)

Is

2.9

1.4

A

Total Power Dissipation (Note 1)

TA = 25°C

TA = 85°C

PD

3.2

1.7

1.5

0.79

W

Operating Junction and Storage

Temperature Range

TJ, Tstg

−55 to 150

°C

Thermal Resistance (Note 1)

Junction−to−Ambient

RqJA

38

82

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to 1″ x1″ FR−4 board.

9 AMPERES

20 VOLTS

RDS(on) = 26 mW

(VGS = 4.5 V, ID = 6.5 A)

RDS(on) = 31 mW

(VGS = 2.5 V, ID = 5.8 A)

Micro8 LEADLESS

CASE 846C

http://onsemi.com

Source 1

Gate 1

Source 2

Gate 2

Drain

(Bottom View)

PIN ASSIGNMENT

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

MARKING DIAGRAM

7900

AYWW

G

1

2

3

4

8

7

6

5

DD

2.4 kW

S2

S1

G2

G1

N−Channel

Drain

http://onsemi.com

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

1

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