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NTLTD7900ZR2 Datasheet(PDF) 1 Page - ON Semiconductor |
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NTLTD7900ZR2 Datasheet(HTML) 1 Page - ON Semiconductor |
1 / 8 page © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 6 1 Publication Order Number: NTLTD7900ZR2/D NTLTD7900ZR2 Power MOSFET 9 A, 20 V, Logic Level, N−Channel Micro8] Leadless EZFETs ™ are an advanced series of Power MOSFETs which contain monolithic back−to−back Zener diodes. These Zener diodes provide protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. EZFET devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are DC−DC converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. Features • Pb−Free Package is Available Applications • Zener Protected Gates Provide Electrostatic Discharge Protection • Designed to Withstand 4000 V Human Body Model • Ultra Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Logic Level Gate Drive − Can be Driven by Logic ICs • Micro8 Leadless Surface Mount Package − Saves Board Space • IDSS Specified at Elevated Temperature MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol 10 Sec Steady State Unit Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±12 V Continuous Drain Current (Note 1) TA = 25°C TA = 85°C ID 9.0 6.4 6.0 4.3 A Pulsed Drain Current (tp v 10 ms) IDM 30 A Continuous Source−Diode Conduction (Note 1) Is 2.9 1.4 A Total Power Dissipation (Note 1) TA = 25°C TA = 85°C PD 3.2 1.7 1.5 0.79 W Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Thermal Resistance (Note 1) Junction−to−Ambient RqJA 38 82 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to 1″ x1″ FR−4 board. 9 AMPERES 20 VOLTS RDS(on) = 26 mW (VGS = 4.5 V, ID = 6.5 A) RDS(on) = 31 mW (VGS = 2.5 V, ID = 5.8 A) Micro8 LEADLESS CASE 846C http://onsemi.com Source 1 Gate 1 Source 2 Gate 2 Drain Drain Drain Drain (Bottom View) PIN ASSIGNMENT A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package MARKING DIAGRAM 7900 AYWW G 1 1 2 3 4 8 7 6 5 DD 2.4 kW 2.4 kW S2 S1 G2 G1 N−Channel N−Channel Drain http://onsemi.com See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. ORDERING INFORMATION 1 |
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