NTLTS3107PR2G datasheet(2/5 Pages) ONSEMI

Part #	NTLTS3107PR2G

Description	Power MOSFET -20 V, -8.3 A, Single P-Channel,Micro8 Leadless Package

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NTLTS3107P

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = −250 mA

−20

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

11

mV/°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = −16 V

TJ = 25°C

−10

mA

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = $8.0 V

±100

nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = −250 mA

−0.45

−1.2

V

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

3.4

mV/°C

Drain−to−Source On Resistance

RDS(on)

VGS = −4.5 V, ID = −8.0 A

12.2

16

mW

VGS = −2.5 V, ID = −7.0 A

15.6

21

VGS = −1.8 V, ID = −5.8 A

26.2

Forward Transconductance

gFS

VDS = −5 V, ID = −8.0 A

25

S

CHARGES AND CAPACITANCES

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz,

VDS = −16 V

4645

6500

pF

Output Capacitance

COSS

465

650

Reverse Transfer Capacitance

CRSS

285

400

Total Gate Charge

QG(TOT)

VGS = −4.5 V, VDS = −16 V,

ID = −8.0 A

40

60

nC

Threshold Gate Charge

QG(TH)

3.0

Gate−to−Source Gate Charge

QGS

7.0

Gate−to−Drain “Miller” Charge

QGD

11

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

td(on)

VGS = −4.5 V, VDS = −10 V,

ID = −8.0 A, RG = 3.0 W

30

ns

Rise Time

tr

20

Turn−Off Delay Time

td(off)

250

Fall Time

tf

80

DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)

Forward Diode Voltage

VSD

VGS = 0 V,

IS = −1.6 A

TJ = 25°C

−0.7

−1.2

V

TJ = 125°C

0.5

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = −1.6 A

75

100

ns

Charge Time

ta

28

Discharge Time

tb

47

Reverse Recovery Charge

QRR

81.5

nC

3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

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