NTMSD3P303R2_06 datasheet(4/9 Pages) ONSEMI

Part #	NTMSD3P303R2

Description	P-Channel Enhancement-Mode Power MOSFET and Schottky Diode Dual SO-8 Package

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NTMSD3P303R2

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TYPICAL MOSFET ELECTRICAL CHARACTERISTICS

0.25

0.2

0.1

0.15

0.05

1

0.6

1.2

1.6

0

5

2

0.5

0.25

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

0

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

Figure 2. Transfer Characteristics

3

0.5

0.4

0.3

7

6

5

0.2

0.1

0

48

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 4. On−Resistance vs. Gate−to−Source

Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 5. On−Resistance vs. Drain Current and

Gate Voltage

−ID, DRAIN CURRENT (AMPS)

Figure 6. On Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

13

25

4

14

3

25

−50

50

75

25

0

150

−25

0.75

1

3

4

VGS = −8 V

VGS = −6 V

VGS = −4.8 V

VGS = −5 V

VGS = −4.4 V

VGS = −3.6 V

VDS > = −10 V

TJ = 25°C

TJ = −55°C

TJ = 100°C

VGS = −10 V

VGS = −4.5 V

6

ID = −3.05 A

VGS = −10 V

6

0.6

0.7

VGS = −4.6 V

VGS = −10 V

ID = −3.05 A

TJ = 25°C

1

1.25

1.5

1.75

5

2

0

1

3

4

6

2

0.5

0.4

0.3

6

5

4

0.2

0.1

0

37

0.6

0.7

1.4

0.8

VGS = −3.2 V

VGS = −3 V

VGS = −2.6 V

ID = −1.5 A

TJ = 25°C

100

125

VGS = −4 V

TJ = 25°C

VGS = −2.8 V

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