© Semiconductor Components Industries, LLC, 2006

May, 2006 − Rev. 8

1

Publication Order Number:

NTR1P02LT1/D

NTR1P02LT1

Power MOSFET

−20 V, −1.3 A, P−Channel

SOT−23 Package

minimal power loss and conserve energy, making these devices ideal

for use in space sensitive power management circuitry. Typical

applications are DC−DC converters and power management in

portable and battery−powered products such as computers, printers,

PCMCIA cards, cellular and cordless telephones.

Features

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

−20

V

Gate−to−Source Voltage − Continuous

±12

V

Drain Current

−1.3

−4.0

A

A

400

mW

Operating and Storage Temperature Range

− 55 to

150

°C

Thermal Resistance − Junction−to−Ambient

300

°C/W

Maximum Lead Temperature for Soldering

Purposes, (1/8″ from case for 10 s)

260

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

D

G

S

Device

Package

ORDERING INFORMATION

NTR1P02LT1

SOT−23

3000 Tape & Reel

P−Channel

NTR1P02LT3

SOT−23

10,000 Tape & Reel

http://onsemi.com

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

NTR1P02LT3G

SOT−23

(Pb−Free)

10,000 Tape & Reel

−20 V

220 mW

−1.3 A

SOT−23

CASE 318

STYLE 21

MARKING DIAGRAM &

PIN ASSIGNMENT

2

P02

= Specific Device Code

M

= Date Code*

G

= Pb−Free Package

1

3

NTR1P02LT1G

SOT−23

(Pb−Free)

3000 Tape & Reel

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

P02 M G

G

1

Gate

2

Source

Drain

3