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NUD3105 Datasheet(PDF) 2 Page - ON Semiconductor |
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NUD3105 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 8 page NUD3105 http://onsemi.com 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Symbol Value Unit Drain to Source Voltage − Continuous VDSS 6.0 Vdc Gate to Source Voltage – Continuous VGS 6.0 Vdc Drain Current – Continuous ID 500 mA Single Pulse Drain−to−Source Avalanche Energy ( TJinitial = 25°C) (Note 2) Ez 50 mJ Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5) Ezpk 4.5 mJ Junction Temperature TJ 150 °C Operating Ambient Temperature TA −40 to 85 °C Storage Temperature Range Tstg −65 to +150 °C Total Power Dissipation (Note 1) Derating Above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. 2. Refer to the section covering Avalanche and Energy. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA) VBRDSS 6.0 8.0 9.0 V Ig = 1.0 mA BVGSO − − 8.0 V Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) IDSS − − − − 15 15 mA Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) IGSS 5.0 − − − 19 50 mA ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 85°C) VGS(th) 0.8 0.8 1.2 − 1.4 1.4 V Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TJ=85°C) (ID = 500 mA, VGS = 5.0 V, TJ=85°C) RDS(on) − − − − − − − − − − 1.2 1.3 0.9 1.3 0.9 W Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C) IDS(on) 300 200 400 − − − mA Forward Transconductance (VOUT = 5.0 V, IOUT = 0.25 A) gFS 350 570 − mmhos |
Similar Part No. - NUD3105_06 |
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Similar Description - NUD3105_06 |
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