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NUD3105 Datasheet(PDF) 2 Page - ON Semiconductor

Part # NUD3105
Description  Integrated Relay, Inductive Load Driver
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NUD3105 Datasheet(HTML) 2 Page - ON Semiconductor

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NUD3105
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Rating
Symbol
Value
Unit
Drain to Source Voltage − Continuous
VDSS
6.0
Vdc
Gate to Source Voltage – Continuous
VGS
6.0
Vdc
Drain Current – Continuous
ID
500
mA
Single Pulse Drain−to−Source Avalanche Energy (
TJinitial = 25°C) (Note 2)
Ez
50
mJ
Repetitive Pulse Zener Energy Limit (DC
v 0.01%) (f = 100 Hz, DC = 0.5)
Ezpk
4.5
mJ
Junction Temperature
TJ
150
°C
Operating Ambient Temperature
TA
−40 to 85
°C
Storage Temperature Range
Tstg
−65 to +150
°C
Total Power Dissipation (Note 1)
Derating Above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction−to−Ambient
RqJA
556
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD−883, Method 3015.
Machine Model Method 200 V.
2. Refer to the section covering Avalanche and Energy.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA)
VBRDSS
6.0
8.0
9.0
V
Ig = 1.0 mA
BVGSO
8.0
V
Drain to Source Leakage Current
(VDS = 5.5 V , VGS = 0 V, TJ = 25°C)
(VDS = 5.5 V, VGS = 0 V, TJ = 85°C )
IDSS
15
15
mA
Gate Body Leakage Current
(VGS = 3.0 V, VDS = 0 V)
(VGS = 5.0 V, VDS = 0 V)
IGSS
5.0
19
50
mA
ON CHARACTERISTICS
Gate Threshold Voltage
(VGS = VDS, ID = 1.0 mA)
(VGS = VDS, ID = 1.0 mA, TJ = 85°C)
VGS(th)
0.8
0.8
1.2
1.4
1.4
V
Drain to Source On−Resistance
(ID = 250 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 3.0 V)
(ID = 500 mA, VGS = 5.0 V)
(ID = 500 mA, VGS = 3.0 V, TJ=85°C)
(ID = 500 mA, VGS = 5.0 V, TJ=85°C)
RDS(on)
1.2
1.3
0.9
1.3
0.9
W
Output Continuous Current
(VDS = 0.25 V, VGS = 3.0 V)
(VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C)
IDS(on)
300
200
400
mA
Forward Transconductance
(VOUT = 5.0 V, IOUT = 0.25 A)
gFS
350
570
mmhos


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