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NUF6105FC Datasheet(PDF) 2 Page - ON Semiconductor |
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NUF6105FC Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page NUF6105FC http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit VRWM Maximum Reverse Working Voltage − − 5.0 V VBR IZ = 10 mA 6.0 7.0 8.0 V IR VRWM = 3.3 V per line − − 0.1 mA RI/O IR = 20 mA 80 100 120 W Cd VR = 2.5 V, f = 1 MHz (Note 1 and 2) − 27 − pF 1. Measured at 25 °C, VR = 2.5 V, f = 1.0 MHz. 2. Total line capacitance is 2 times the diode capacitance (Cd). TYPICAL PERFORMANCE CURVES (TA = 25°C unless otherwise specified) −50 −45 −40 −35 −30 −25 −20 −15 −10 −5 0 10 100 1000 10000 Figure 1. Insertion Loss Curve (S21 Measurement) FREQUENCY (MHz) −80 −70 −60 −50 −40 −30 −20 −10 0 10 100 1000 10000 Figure 2. Analog Crosstalk Curve (S41 Measurement) FREQUENCY (MHz) Channel 1 or Channel 6 Channel 2 or Channel 5 Channel 3 or Channel 4 Channel 1 to Channel 2 Channel 3 to Channel 4 TEMPERATURE ( °C) 95 96 97 98 99 100 101 102 103 104 105 −40 −15 10 35 60 85 0 0.5 1.0 1.5 2.0 0 1.0 2.0 3.0 4.0 5.0 REVERSE VOLTAGE (V) Figure 3. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance Cd at 2.5 V) Figure 4. Resistance Over Temperature |
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