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BYD71 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BYD71 Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 11 page 1996 Sep 19 3 Not recommended for new designs Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYD71 series ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. IFRM repetitive peak forward current Ttp =55 °C; see Figs 6 and 7 BYD71A to D − 4.7 A BYD71E to G − 5.0 A IFRM repetitive peak forward current Tamb =60 °C; see Figs 8 and 9 BYD71A to D − 3.7 A BYD71E to G − 3.9 A IFSM non-repetitive peak forward current t = 10 ms half sine wave; Tj =Tj max prior to surge; VR =VRRMmax − 7A PRSM non-repetitive peak reverse power dissipation t=20 µs half sine wave; Tj =Tj max prior to surge BYD71A to D − 250 W BYD71E to G − 150 W Tstg storage temperature −65 +175 °C Tj junction temperature −65 +175 °C SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VF forward voltage IF = 0.5 A; Tj =Tj max; see Figs 12 and 13 BYD71A to D −− 0.84 V BYD71E to G −− 0.90 V VF forward voltage IF = 0.5 A; see Figs 12 and 13 BYD71A to D −− 1.05 V BYD71E to G −− 1.11 V V(BR)R reverse avalanche breakdown voltage IR = 0.1 mA BYD71A 55 −− V BYD71B 110 −− V BYD71C 165 −− V BYD71D 220 −− V BYD71E 275 −− V BYD71F 330 −− V BYD71G 440 −− V IR reverse current VR =VRRMmax; see Fig 14 −− 1 µA VR =VRRMmax; Tj = 165 °C; see Fig 14 −− 75 µA trr reverse recovery time when switched from IF = 0.5 A to IR =1A; measured at IR = 0.25 A see Fig 18 BYD71A to D −− 25 ns BYD71E to G −− 50 ns SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT |
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