NCN6010

http://onsemi.com

3

PIN DESCRIPTIONS

Pin

Name

Type

Description

1

POWER

This pin is connected to the system controller power supply suitable to operate from a

3.6 V typical battery. A low ESR ceramic capacitor (4.7

mF typical) shall be used to bypass

the power supply voltage.

2

STOP

INPUT

A Low level on this pin resets the SIM interface, switching off the SIM_VCC, according to

the ISO7816−3 Power Down procedure (See Table 1 and Figure 3).

3

INPUT

The signal present on this pin programs the SIM_VCC value (See Table 1):

MOD_VCC = L

→ SIM_VCC = 5.0 V

MOD_VCC = H

→ SIM_VCC = 3.0 V

4

PWR_ON

INPUT

The signal present on this pin controls the SIM_VCC state (See Table 1):

PWR_ON = L

→ SIM_VCC = Open, no supply connected to the SIM card.

PWR_ON = H

→ SIM_VCC = Active, the card is powered.

5

I/O

INPUT

This pin is connected to an external microcontroller or GSM management unit. A

bi−directional level translator adapts the serial I/O signal between the smart card and the

external controller. A built−in constant 20 k

W (typical) resistor provides a high impedance

state when not activated.

6

CLOCK

INPUT

The clock signal, coming from the external controller, must have a Duty Cycle within the

Min/Max values defined by the specification (typically 50%). The built−in level shifter

translates the input signal to the external SIM card CLK input.

7

RESET

INPUT

The RESET signal present at this pin is connected to the SIM card. The internal level

shifter translates the level according to the voltages present at pin 1 and the SIM_VCC

programmed value.

8

SIM_RST

OUTPUT

This pin is connected to the RESET pin of the card connector. A level translator adapts the

external RESET signal to the SIM card. A built−in active pull down connects this pin to

ground when the device is in a nonoperating mode.

9

SIM_CLK

OUTPUT

This pin is connected to the CLK pin of the card connector. The CLOCK signal comes from

the external clock generator, the internal level shifter being used to adapt the voltage

defined for the SIM_VCC. A built−in active pull down connects this pin to ground when the

device is in a nonoperating mode.

10

GND

GROUND

This pin is the GROUND reference for the integrated circuit and associated signals. Cares

must be observed to avoid voltage spikes when the device operates in a normal operation.

11

SIM_I/O

This pin handles the connection to the serial I/O of the card connector. A bi−directional

level translator adapts the serial I/O signal between the card and the microcontroller. A 20

k

W (typical) pull up resistor provides a High impedance state for the SIM card I/O link.

12

Cta

POWER

This pin is connected to the external capacitor used by the internal Charge Pump

converter. Using Low ESR ceramic type is recommended (X5R or X7R).

13

Ctb

POWER

This pin is connected to the external capacitor used by the internal Charge Pump

converter. Using Low ESR ceramic type is recommended (X5R or X7R).

14

SIM_VCC

POWER

This pin is connected to the SIM card power supply pin. An internal Charge Pump

converter is programmable by the external MPU to supply either 3.0 V or 5.0 V output

voltage. An external 1.0

mF minimum ceramic capacitor (ESR t 100 mW, X5R or X7R

recommended) must be connected across SIM_VCC and GND.

During a normal operation, the SIM_VCC voltage can be set to 3.0 V followed by a 5.0 V

value, or can start directly to any of these two values. When the voltage is adjusted

downward (from 5.0 V to 3.0 V) cares must be observed as reverse peak current can flow

from the external capacitors to the battery during a short amount of time (in the 1.0

ms

range). When such a voltage adjustment is necessary, it is recommended to force

SIM_VCC to zero, wait 350

ms minimum, then reprogram the chip to get SIM_VCC = 3.0 V.