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NCN6010DTBR2G Datasheet(PDF) 11 Page - ON Semiconductor

Part # NCN6010DTBR2G
Description  SIM Card Supply and Level Shifter
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCN6010DTBR2G Datasheet(HTML) 11 Page - ON Semiconductor

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NCN6010
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Figure 10. Basic Charge Pump Operating Timings
SIM_VCC = 5.0 V
S1
S2
S3
S4
S5
SIM_VCC = 3.0 V
MOD_VCC
When the NCN6010 is programmed in the 5.0 V output
voltage, the clocks are activated, switch S5 is disconnected
and the output voltage is the result of the C1 charge transfer
into the output load. The current is limited by three mains
parameters:
− the Ron of the switching MOS (S1 through S4)
− the operating frequency
− the C1/C2 ratio and their ESR
The first parameters are depending upon the internal
structure and size of the NMOS/PMOS devices used to
design the chip. The third parameter is adjustable by the user
and, beside the micro farad values, the type of capacitors
plays a significant role. As a matter of fact, using a low cost
electrolytic model will ruin the efficiency due to the high
ESR of such a capacitor. It is highly recommended to use
ceramic types, preferably from the X5R or X7R series, to
achieve the efficiency and the SIM_VCC output voltage
ripple. Table 2 summarizes the characteristics of the most
common type of capacitors.
Table 2. Comparison of Capacitor Types
Manufacturers
Type/Serie
Format
Max Value
Tolerance
Typ. Z @ 500 kHz
MURATA
CERAMIC/GRM225
0805
10
mF/6.3 V
+80%/−20%
30 m
W
VISHAY
Tantalum/594C/593C
1206
10
mF/16 V
450 m
W
VISHAY
Electrolytic/94SV
1206
10
mF/10 V
−20%/+20%
400 m
W


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