BYQ28E datasheet(2/8 Pages) PHILIPS

Part #	BYQ28E

Description	Rectifier diodes ultrafast, rugged

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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Philips Semiconductors

Product specification

Rectifier diodes

BYQ28E, BYQ28EB, BYQ28ED series

ultrafast, rugged

ESD LIMITING VALUE

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

C

Electrostatic discharge

Human body model;

-

8

kV

capacitor voltage

C = 250 pF; R = 1.5 k

Ω

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction

per diode

-

4.5

K/W

to mounting base

both diodes

-

3

K/W

R

th j-a

Thermal resistance junction

SOT78 package, in free air

-

60

-

K/W

to ambient

SOT404 and SOT428 packages, pcb

-

50

-

K/W

mounted, minimum footprint, FR4 board

ELECTRICAL CHARACTERISTICS

All characteristics are per diode at T

j = 25 ˚C unless otherwise specified

SYMBOL PARAMETER

CONDITIONS

MIN.

TYP. MAX. UNIT

V

F

Forward voltage

I

F = 5 A; Tj = 150˚C

-

0.8

0.895

V

I

F = 5 A

-

0.95

1.1

V

I

F = 10 A

-

1.1

1.25

V

I

R

Reverse current

V

R = VRWM

-2

10

µA

V

R = VRWM; Tj = 100˚C

-

0.1

0.2

mA

Q

rr

Reverse recovered charge

I

F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs-

4

9

nC

t

rr1

Reverse recovery time

I

F = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/µs15

25

ns

t

rr2

Reverse recovery time

I

F = 0.5 A to IR = 1 A; Irec = 0.25 A

-

10

20

ns

I

rrm

Peak reverse recovery

I

F = 5 A; VR ≥ 30 V; -dIF/dt = 50 A/µs

-

0.5

0.7

A

current

V

fr

Forward recovery voltage

I

F = 1 A; dIF/dt = 10 A/µs-

1

-

V

October 1998

2

Rev 1.300

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