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NCP1012ST65T3 Datasheet(PDF) 5 Page - ON Semiconductor

Part # NCP1012ST65T3
Description  Self?뭆upplied Monolithic Switcher for Low Standby?뭁ower Offline SMPS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCP1012ST65T3 Datasheet(HTML) 5 Page - ON Semiconductor

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (For typical values TJ =25C, for min/max values TJ =--40C to +125C, Max TJ = 150C,
VCC = 8.0 V unless otherwise noted.)
Rating
Pin
Symbol
Min
Typ
Max
Unit
SUPPLY SECTION AND VCC MANAGEMENT
VCC Increasing Level at which the Current Source Turns--off
1
VCCOFF
7.9
8.5
9.1
V
VCC Decreasing Level at which the Current Source Turns--on
1
VCCON
6.9
7.5
8.1
V
Hysteresis between VCCOFF and VCCON
1
--
--
1.0
--
V
VCC Decreasing Level at which the Latch--off Phase Ends
1
VCClatch
4.4
4.7
5.1
V
VCC Decreasing Level at which the Internal Latch is Released
1
VCCreset
--
3.0
--
V
Internal IC Consumption, MOSFET Switching at 65 kHz (Note 2)
1
ICC1
--
0.92
1.1
mA
Internal IC Consumption, MOSFET Switching at 100 kHz (Note 2)
1
ICC1
--
0.95
1.15
mA
Internal IC Consumption, MOSFET Switching at 130 kHz (Note 2)
1
ICC1
--
0.98
1.2
mA
Internal IC Consumption, Latch--off Phase, VCC =6.0 V
1
ICC2
--
290
--
mA
Active Zener Voltage Positive Offset to VCCOFF
1
Vclamp
140
200
300
mV
Latch--off Current
NCP1012/13/14
0C<TJ < 125C
--40C<TJ < 125C
NCP1010/11
0C<TJ < 125C
--40C<TJ < 125C
1
ILatch
6.3
5.8
5.8
5.3
7.4
7.4
7.3
7.3
9.2
9.2
9.0
9.0
mA
POWER SWITCH CIRCUIT
Power Switch Circuit On--state Resistance
NCP1012/13/14 (Id = 50 mA)
TJ =25C
TJ = 125C
NCP1010/11 (Id = 50 mA)
TJ =25C
TJ = 125C
5
RDSon
--
11
19
22
38
16
24
35
50
Ω
Power Switch Circuit and Startup Breakdown Voltage
(ID(off) = 120 mA, TJ =25C)
5
BVdss
700
--
--
V
Power Switch and Startup Breakdown Voltage Off--state Leakage Current
TJ =--40C (Vds = 650 V)
TJ =25C (Vds = 700 V)
TJ = 125C (Vds = 700 V)
5
5
5
IDS(OFF)
--
--
--
70
50
30
120
--
--
mA
Switching Characteristics (RL = 50 Ω, Vds Set for Idrain = 0.7 x Ilim)
Turn--on Time (90%--10%)
Turn--off Time (10%--90%)
5
5
ton
toff
--
--
20
10
--
--
ns
INTERNAL STARTUP CURRENT SOURCE
High--voltage Current Source, VCC =8.0 V
NCP1012/13/14
0C<TJ < 125C
--40C<TJ < 125C
NCP1010/11
0C<TJ < 125C
--40C<TJ < 125C
1
IC1
5.0
5.0
5.0
5.0
8.0
8.0
8.0
8.0
10
11
10.3
11.5
mA
High--voltage Current Source, VCC =0
1
IC2
--
10
--
mA
CURRENT COMPARATOR TJ =25C(Note 2)
Maximum Internal Current Setpoint, NCP1010 (Note 3)
5
Ipeak (22)
90
100
110
mA
Maximum Internal Current Setpoint, NCP1011 (Note 3)
5
Ipeak (22)
225
250
275
mA
Maximum Internal Current Setpoint, NCP1012 (Note 3)
5
Ipeak (11)
225
250
275
mA
Maximum Internal Current Setpoint, NCP1013 (Note 3)
5
Ipeak (11)
315
350
385
mA
Maximum Internal Current Setpoint, NCP1014 (Note 3)
5
Ipeak (11)
405
450
495
mA
Default Internal Current Setpoint for Skip--Cycle Operation, Percentage of
Max Ip
--
ILskip
--
25
--
%
Propagation Delay from Current Detection to Drain OFF State
--
TDEL
--
125
--
ns
Leading Edge Blanking Duration
--
TLEB
--
250
--
ns
2. See characterization curves for temperature evolution.
3. Adjust di/dt to reach Ipeak in 3.2 msec.


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