Philips Semiconductors

Product specification

Rectifier diodes

BYQ30EB series

ultrafast, rugged

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated high efficiency

SYMBOL

PARAMETER

MAX.

MAX.

MAX.

UNIT

rugged dual rectifier diodes in a

plastic envelope suitable for surface

BYQ30EB-

100

150

200

mounting,

featuring

low

forward

V

RRM

Repetitive peak reverse

100

150

200

V

voltage

drop,

ultra-fast

recovery

voltage

times

and

soft

recovery

V

F

Forward voltage

0.95

0.95

0.95

V

characteristic. These devices can

I

O(AV)

Output current (both

16

16

16

A

withstand reverse voltage transients

diodes conducting)

and have guaranteed reverse surge

t

rr

Reverse recovery time

25

25

25

ns

and

ESD

capability.

They

are

I

RRM

Repetitive peak reverse

0.2

0.2

0.2

A

intended for use in switched mode

current per diode

power supplies and high frequency

circuits

in

general

where

low

conduction and switching losses are

essential.

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

1

no connection

2

cathode

3

anode

mb

cathode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-100

-150

-200

V

RRM

Repetitive peak reverse voltage

-

100

150

200

V

V

RWM

Crest working reverse voltage

-

100

150

200

V

V

R

Continuous reverse voltage

-

100

150

200

V

I

O(AV)

Output current (both diodes

square wave

-

16

A

conducting)

1

δ = 0.5; T

I

O(RMS)

RMS forward current

-

23

A

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

16

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

100

A

current per diode

t = 8.3 ms

-

110

A

sinusoidal; with reapplied

V

RWM(max)

I

t = 10 ms

-

50

A

I

RRM

Repetitive peak reverse current t

-

0.2

A

per diode

I

RSM

Non-repetitive peak reverse

t

-

0.2

A

current per diode

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

13

mb

2

k

a

tab

3

1 Neglecting switching and reverse current losses.

October 1997

1

Rev 1.000