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BYT28-500 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYT28-500 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 5 page Philips Semiconductors Product specification Dual rectifier diodes BYT28 series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 300 V/ 400 V/ 500 V • Fast switching • Soft recovery characteristic V F ≤ 1.05 V • High thermal cycling performance • Low thermal resistance I O(AV) = 10 A t rr ≤ 60 ns GENERAL DESCRIPTION PINNING SOT78 (TO220AB) Dual, common cathode, ultra-fast, PIN DESCRIPTION epitaxial rectifier diodes intended for use as output rectifiers in high 1 cathode frequency switched mode power supplies. 2 anode The BYT28 series is supplied in the tab cathode conventional leaded SOT78 (TO220AB) package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYT28 -300 -400 -500 V RRM Repetitive peak reverse voltage - 300 400 500 V V R Continuous reverse voltage T mb ≤ 147˚C - 300 400 500 V I O(AV) Average rectified output current square wave; δ = 0.5; - 10 A (both diodes conducting) 1 T mb ≤ 115 ˚C I FSM Non-repetitive peak forward t = 10 ms - 50 A current per diode. t = 8.3 ms - 55 A sinusoidal; with reapplied V RRM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to per diode - - 4.5 K/W heatsink both diodes conducting - - 3.0 K/W R th j-a Thermal resistance junction to in free air. - 60 - K/W ambient k a1 a2 13 2 12 3 tab 1 Neglecting switching and reverse current losses. October 1998 1 Rev 1.400 |
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