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BYV29F Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYV29F Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Rectifier diodes BYV29F, BYV29X series ultrafast FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 300 V/ 400 V/ 500 V • Fast switching • Soft recovery characteristic V F ≤ 1.03 V • High thermal cycling performance • Isolated mounting tab I F(AV) = 9 A t rr ≤ 60 ns GENERAL DESCRIPTION Ultra-fast epitaxial rectifier diodes intended for use in switched mode power supply output rectification, electronic lighting ballasts and high frequency switching circuits in general. The BYV29F series is supplied in the SOD100 package. The BYV29X series is supplied in the SOD113 package. PINNING SOD100 SOD113 PIN DESCRIPTION 1 cathode (k) 2 anode (a) tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV29F/BYV29X -300 -400 -500 V RRM Peak repetitive reverse voltage - 300 400 500 V V R Continuous reverse voltage T hs ≤ 138˚C 1 - 300 400 500 V I F(AV) Average forward current 2 square wave; δ = 0.5; - 9 A T hs ≤ 90 ˚C I FSM Non-repetitive peak forward t = 10 ms - 100 A current t = 8.3 ms - 110 A sinusoidal; with reapplied V RRM(max) T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C k a 12 12 case 12 case 1 T hs de-rating for thermal stability. 2 Neglecting switching and reverse current losses February 1999 1 Rev 1.400 |
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