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BYV29F Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYV29F Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 7 page Philips Semiconductors Product specification Rectifier diodes BYV29F, BYV29X series ultrafast ISOLATION LIMITING VALUE & CHARACTERISTIC T hs = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V isol Peak isolation voltage from SOD100 package; R.H. ≤ 65%; clean and - - 1500 V all terminals to external dustfree heatsink V isol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; - - 2500 V all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean heatsink and dustfree C isol Capacitance from pin 2 to f = 1 MHz - 10 - pF external heatsink THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-hs Thermal resistance junction to with heatsink compound - - 5.5 K/W heatsink without heatsink compound - - 7.2 K/W R th j-a Thermal resistance junction to in free air. - 55 - K/W ambient ELECTRICAL CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 8 A; Tj = 150˚C - 0.90 1.03 V I F = 8 A - 1.05 1.25 V I F = 20 A - 1.20 1.40 V I R Reverse current V R = VRRM - 2.0 50 µA V R = VRRM; Tj = 100 ˚C - 0.1 0.35 mA Q s Reverse recovery charge I F = 2 A to VR ≥ 30 V; - 40 60 nC dI F/dt = 20 A/µs t rr Reverse recovery time I F = 1 A to VR ≥ 30 V; - 50 60 ns dI F/dt = 100 A/µs I rrm Peak reverse recovery current I F = 10 A to VR ≥ 30 V; - 4.0 5.5 A dI F/dt = 50 A/µs; Tj = 100˚C V fr Forward recovery voltage I F = 10 A; dIF/dt = 10 A/µs - 2.5 - V February 1999 2 Rev 1.400 |
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