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NCV4274DS50G Datasheet(PDF) 2 Page - ON Semiconductor

Part # NCV4274DS50G
Description  400 mA 2% and 4%Voltage Regulator Family
Download  16 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NCV4274DS50G Datasheet(HTML) 2 Page - ON Semiconductor

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NCV4274, NCV4274A
http://onsemi.com
2
Figure 1. Block Diagram
+
Bandgap
Refernece
Thermal
Shutdown
Current Limit and
Saturation Sense
GND
Q
I
Pin Definitions and Functions
Pin No.
Symbol
Function
1
I
Input; Bypass directly at the IC a ceramic capacitor to GND.
2,4
GND
Ground
3
Q
Output; Bypass with a capacitor to GND.
1. DPAK 3LD package code 6025
2. D2PAK 3LD package code 6083
ABSOLUTE MAXIMUM RATINGS
Pin Symbol, Parameter
Symbol
Condition
Min
Max
Unit
I, Input−to−Regulator
Voltage
VI
−42
45
V
Current
II
Internally
Limited
Internally
Limited
I, Input peak Transient Voltage to Regulator with Respect
to GND
VI
60
V
Q, Regulated Output
Voltage
VQ
−1.0
40
V
Current
IQ
Internally
Limited
Internally
Limited
GND, Ground Current
IGND
100
mA
Junction Temperature
Storage Temperature
TJ
TStg
−50
150
150
°C
°C
ESD Capability, Human Body Model
ESDHB
4
kV
ESD Capability, Machine Model
ESDMM
200
V
ESD Capability, Charged Device Model
ESDCDM
1
kV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD CDM tested per EIA/JES D22/C101, Field Induced Charge Model


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