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BYV28-400 Datasheet(PDF) 4 Page - NXP Semiconductors |
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BYV28-400 Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 16 page 1997 Nov 24 4 Philips Semiconductors Product specification Ultra fast low-loss controlled avalanche rectifiers BYV28 series THERMAL CHARACTERISTICS Note 1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.20 For more information please refer to the “General Part of associated Handbook”. Cd diode capacitance f = 1 MHz; VR =0; see Figs 17, 18 and 19 BYV28-50 to 200 − 190 − pF BYV28-300 and 400 − 150 − pF BYV28-500 and 600 − 125 − pF maximum slope of reverse recovery current when switched from IF =1AtoVR ≥ 30 V and dIF/dt = −1A/µs; see Fig.21 −− 4A/ µs SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length = 10 mm 25 K/W Rth j-a thermal resistance from junction to ambient note 1 75 K/W SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dI R dt -------- |
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