Philips Semiconductors

Product specification

Rectifier diodes

BYV32F, BYV32EX series

ultrafast, rugged

FEATURES

SYMBOL

QUICK REFERENCE DATA

• Low forward volt drop

V

• Fast switching

• Soft recovery characteristic

V

• Reverse surge capability

• High thermal cycling performance

I

• Isolated mounting tab

I

t

GENERAL DESCRIPTION

Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power

supplies.

The BYV32F series is supplied in the SOT186 package.

The BYV32EX series is supplied in the SOT186A package.

PINNING

SOT186

SOT186A

PIN

DESCRIPTION

1

anode 1 (a)

2

cathode (k)

3

anode 2 (a)

tab

isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

BYV32F / BYV32EX

-150

-200

V

RRM

Peak repetitive reverse voltage

-

150

200

V

V

RWM

Crest working reverse voltage

-

150

200

V

V

R

Continuous reverse voltage

-

150

200

V

I

O(AV)

Average rectified output current square wave

-

12

A

(both diodes conducting)

1

δ = 0.5; T

I

FRM

Repetitive peak forward current t = 25

µs; δ = 0.5;

-

20

A

per diode

T

I

FSM

Non-repetitive peak forward

t = 10 ms

-

125

A

current per diode

t = 8.3 ms

-

137

A

sinusoidal; with reapplied

V

RWM(max)

I

RRM

Repetitive peak reverse current t

-

0.2

A

per diode

I

RSM

Non-repetitive peak reverse

t

-

0.2

A

current per diode

T

stg

Storage temperature

-40

150

˚C

T

j

Operating junction temperature

-

150

˚C

k

a1

a2

13

2

12 3

case

12 3

case

1 Neglecting switching and reverse current losses

October 1998

1

Rev 1.300