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BYV32F-200 Datasheet(PDF) 1 Page - NXP Semiconductors |
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BYV32F-200 Datasheet(HTML) 1 Page - NXP Semiconductors |
1 / 7 page Philips Semiconductors Product specification Rectifier diodes BYV32F, BYV32EX series ultrafast, rugged FEATURES SYMBOL QUICK REFERENCE DATA • Low forward volt drop V R = 150 V/ 200 V • Fast switching • Soft recovery characteristic V F ≤ 0.85 V • Reverse surge capability • High thermal cycling performance I O(AV) = 12 A • Isolated mounting tab I RRM = 0.2 A t rr ≤ 25 ns GENERAL DESCRIPTION Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYV32F series is supplied in the SOT186 package. The BYV32EX series is supplied in the SOT186A package. PINNING SOT186 SOT186A PIN DESCRIPTION 1 anode 1 (a) 2 cathode (k) 3 anode 2 (a) tab isolated LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT BYV32F / BYV32EX -150 -200 V RRM Peak repetitive reverse voltage - 150 200 V V RWM Crest working reverse voltage - 150 200 V V R Continuous reverse voltage - 150 200 V I O(AV) Average rectified output current square wave - 12 A (both diodes conducting) 1 δ = 0.5; T hs ≤ 95 ˚C I FRM Repetitive peak forward current t = 25 µs; δ = 0.5; - 20 A per diode T hs ≤ 95 ˚C I FSM Non-repetitive peak forward t = 10 ms - 125 A current per diode t = 8.3 ms - 137 A sinusoidal; with reapplied V RWM(max) I RRM Repetitive peak reverse current t p = 2 µs; δ = 0.001 - 0.2 A per diode I RSM Non-repetitive peak reverse t p = 100 µs - 0.2 A current per diode T stg Storage temperature -40 150 ˚C T j Operating junction temperature - 150 ˚C k a1 a2 13 2 12 3 case 12 3 case 1 Neglecting switching and reverse current losses October 1998 1 Rev 1.300 |
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