NID9N05CL datasheet(5/7 Pages) ONSEMI

Part #	NID9N05CL

Description	Power MOSFET

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Manufacturer	ONSEMI [ON Semiconductor]

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NID9N05CL

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5

Crss

020

30

40

50

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 7. Capacitance Variation

200

0

300

100

10

VGS = 0 V

TJ = 25°C

Coss

Ciss

400

500

Frequency = 10 kHz

VDS

VGS

10

0

0.4

DRAIN−TO−SOURCE DIODE CHARACTERISTICS

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

Figure 8. Gate−To−Source and Drain−To−Source

Voltage versus Total Charge

Figure 9. Resistive Switching Time

Variation versus Gate Resistance

RG, GATE RESISTANCE (OHMS)

110

100

10,000

100

VGS = 0 V

TJ = 25°C

Figure 10. Diode Forward Voltage versus Current

0

5

3

1

0

Qg, TOTAL GATE CHARGE (nC)

4

2

3

12

5

1.2

2

4

6

ID = 9 A

TJ = 25°C

Qgd

Qgs

QT

tr

td(off)

td(on)

tf

1000

VDD = 40 V

ID = 9 A

VGS = 10 V

4

8

1.0

0.8

0.6

50

40

30

20

10

0

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