NID5003N_06 datasheet(3/6 Pages) ONSEMI

Part #	NID5003N

Description	Self?뭁rotected FET with Temperature and Current Limit

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NID5003N

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TYPICAL PERFORMANCE CURVES

100°C

0

35

20

3

1

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

15

5

0

Figure 1. On−Region Characteristics

12

5

4

0

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.3

46

0.5

0

Figure 3. On−Resistance vs. Gate−to−Source

Voltage

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.05

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

−50

10

−30

30

1.4

1.0

0.4

0.2

0

50

150

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

1.0

35

TJ = −55°C

ID = 5 A

TJ = 25°C

0.045

0.03

70

TJ = 25°C

ID = 5 A

VGS = 10 V

2

25°C

1.8

VGS = 10 V

210

10

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

VGS = 0 V

TJ = 150°C

TJ = 100°C

0.06

VGS = 5 V

10000

100000

100

5

VDS ≥ 10 V

0.055

020

10

25

3

79

8

23

4

5

45

30

25

0.1

0.2

0.4

0.7

0.9

0.6

0.8

0.035

0.04

110 130

1000

10

15

1.5

2.5

3.5

67

8

9

10

0.6

0.8

1.2

1.6

90

−10

40

10

25

35

15

5

4

0.5

3.5

1.5

2.5

4.5

20

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