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BYV79-150 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BYV79-150 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 6 page Philips Semiconductors Product specification Rectifier diodes BYV79 series ultrafast THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to - - 2.0 K/W mounting base R th j-a Thermal resistance junction to in free air - 60 - K/W ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage I F = 14 A; Tj = 150˚C - 0.83 0.90 V I F = 14 A - 0.95 1.05 V I F = 50 A - 1.20 1.30 V I R Reverse current V R = VRWM; Tj = 100 ˚C - 0.5 1.3 mA V R = VRWM - 5 50 µA DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Q s Reverse recovery charge I F = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/µs - 6 15 nC t rr Reverse recovery time I F = 1 A; VR ≥ 30 V; - 20 30 ns -dI F/dt = 100 A/µs I rrm Peak reverse recovery current I F = 10 A; VR ≥ 30 V; - 3 4 A -dI F/dt = 50 A/µs; Tj = 100 ˚C V fr Forward recovery voltage I F = 10 A; dIF/dt = 10 A/µs - 1 - V October 1994 2 Rev 1.100 |
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