TIP100 datasheet(1/7 Pages) ONSEMI

Part #	TIP100

Description	Plastic Medium?뭁ower Complementary Silicon Transistors

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Manufacturer	ONSEMI [ON Semiconductor]

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August, 2005 − Rev. 11

1

Publication Order Number:

TIP100/D

TIP100, TIP101, TIP102

(NPN); TIP105, TIP106,

TIP107 (PNP)

TIP101, TIP102, TIP106 and TIP107 are Preferred Devices

Plastic Medium−Power

Complementary Silicon

Transistors

Designed for general−purpose amplifier and low−speed switching

applications.

Features

• High DC Current Gain −

hFE

= 2500 (Typ) @ IC

= 4.0 Adc

• Collector−Emitter Sustaining Voltage − @ 30 mAdc

VCEO(sus) = 60 Vdc (Min) − TIP100, TIP105

= 80 Vdc (Min) − TIP101, TIP106

= 100 Vdc (Min) − TIP102, TIP107

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 2.0 Vdc (Max) @ IC

= 3.0 Adc

= 2.5 Vdc (Max) @ IC = 8.0 Adc

• Monolithic Construction with Built−in Base−Emitter Shunt Resistors

• Pb−Free Packages are Available*

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−220AB

CASE 221A

STYLE 1

Preferred devices are recommended choices for future use

and best overall value.

MARKING

DIAGRAM

DARLINGTON 8 AMPERE

COMPLEMENTARY SILICON

POWER TRANSISTORS

60−80−100 VOLTS, 80 WATTS

http://onsemi.com

1

2

3

4

TIP10x

= Device Code

x

= 0, 1, 2, 5, 6, or 7

A

= Assembly Location

Y

= Year

WW

= Work Week

G

= Pb−Free Package

TIP10xG

AYWW

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

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