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BZX84J_SER_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 1 March 2007 6 of 12 NXP Semiconductors BZX84J series Single Zener diodes [1] f = 1 MHz; VR =0V [2] tp = 100 µs; square wave; Tj =25 °C prior to surge Table 9. Characteristics per type; BZX84J-B27 to BZX84J-C75 Tj =25 °C unless otherwise specified. BZX84J- xxx Sel Working voltage VZ (V) Differential resistance rdif (Ω) Reverse current IR (µA) Temperature coefficient SZ (mV/K) Diode capacitance Non-repetitive peak reverse current IZ =2mA IZ = 0.5 mA IZ =2mA IZ =2mA Min Max Max Max Max VR (V) Min Max Max Max 27 B 26.5 27.5 250 40 0.05 18.9 21.4 25.3 73 1 C 25.1 28.9 30 B 29.4 30.6 250 40 0.05 21 24.4 29.4 66 1 C28 32 33 B 32.3 33.7 275 40 0.05 23.1 27.4 33.4 60 0.9 C31 35 36 B 35.3 36.7 300 60 0.05 25.2 30.4 37.4 59 0.8 C34 38 39 B 38.2 39.8 300 75 0.05 27.3 33.4 41.2 58 0.7 C37 41 43 B 42.1 43.9 325 80 0.05 30.1 37.6 46.6 56 0.6 C40 46 47 B 46.1 47.9 325 90 0.05 32.9 42 51.8 55 0.5 C44 50 51 B 50 52 350 110 0.05 35.7 46.6 57.2 52 0.4 C48 54 56 B 54.9 57.1 375 120 0.05 39.2 52.2 63.8 49 0.3 C52 60 62 B 60.8 63.2 400 140 0.05 43.4 58.8 71.6 44 0.3 C58 66 68 B 66.6 69.4 400 160 0.05 47.6 65.6 79.8 40 0.25 C64 72 75 B 73.5 76.5 400 175 0.05 52.5 73.4 88.6 35 0.2 C70 79 |
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