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BZX84J_SER_1 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 01 — 1 March 2007 3 of 12 NXP Semiconductors BZX84J series Single Zener diodes 5. Limiting values [1] tp = 100 µs; square wave; Tj =25 °C prior to surge [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for cathode 1 cm2. 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Soldering point of cathode tab. 7. Characteristics [1] Pulse test: tp ≤ 300 µs; δ≤ 0.02. Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit IF forward current - 250 mA IZSM non-repetitive peak reverse current [1] - see and 9 PZSM non-repetitive peak reverse power dissipation [1] -40 W Ptot total power dissipation Tamb ≤ 25 °C [2] - 550 mW Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] - - 230 K/W Rth(j-sp) thermal resistance from junction to solder point [2] --55 K/W Table 7. Characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 10 mA - - 0.9 V IF = 100 mA - - 1.1 V |
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