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BYX134GL Datasheet(PDF) 2 Page - NXP Semiconductors

Part # BYX134GL
Description  High-voltage car ignition diode
Download  4 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BYX134GL Datasheet(HTML) 2 Page - NXP Semiconductors

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2000 Feb 29
2
Philips Semiconductors
Product specification
High-voltage car ignition diode
BYX134GL
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability.
APPLICATIONS
• Car ignition systems
• Automotive applications with extreme temperature
requirements.
DESCRIPTION
Rugged glass package, using a high temperature alloyed
construction.
The SOD119AC is hermetically sealed and fatigue free as
coefficients of expansion of all used parts are matched.
The package is designed to be used in an insulating
medium such as resin, oil or SF6 gas.
handbook, halfpage
ka
MAM420
Fig.1 Simplified outline (SOD119AC) and symbol.
Cathode indicated by a blue band.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
4kV
VRWM
crest working reverse voltage
4kV
IF(AV)
average forward current
50
mA
IRSM
non-repetitive peak reverse current
t = 100
µs triangular pulse;
Tj max prior to surge
50
mA
Tstg
storage temperature
−65
+200
°C
Tj
junction temperature
continuous
175
°C
maximum 30 minutes
200
°C
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VF
forward voltage
IF = 10 mA
57V
V(BR)R
reverse avalanche breakdown
voltage
IR = 100 µA
5.5
7.5
kV
IR
reverse current
VR =VRWMmax; Tj = 175 °C
30
µA
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
Tamb =Tleads; lead length = 10 mm
90
K/W


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