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BZV55-B5V1 Datasheet(PDF) 6 Page - NXP Semiconductors |
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BZV55-B5V1 Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 2002 Feb 28 6 Philips Semiconductors Product specification Voltage regulator diodes BZV55 series THERMAL CHARACTERISTICS Note 1. Device mounted on a ceramic substrate of 10 × 10 × 0.6 mm. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 300 K/W Rth j-a thermal resistance from junction to ambient see Fig.2 and note 1 380 K/W GRAPHICAL DATA handbook, full pagewidth 10−1 110 102 103 104 105 MBG930 102 10 1 103 tp (ms) tp tp T T δ = 0.02 0.01 ≤0.001 0.75 0.50 0.33 0.20 0.10 0.05 δ = 1 Rth j-a (K/W) Fig.2 Thermal resistance from junction to ambient as a function of pulse duration. |
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