CMT06N60 datasheet(2/6 Pages) CHAMP

Part #	CMT06N60

Description	POWER FIELD EFFECT TRANSISTOR

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Manufacturer	CHAMP [Champion Microelectronic Corp.]

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2 / 6 page

CMT06N60

POWER FIELD EFFECT TRANSISTOR

2003/06/19

Preliminary Rev. 1.1

Champion Microelectronic Corporation

Page 2

ABSOLUTE MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain to Current － Continuous

－

Pulsed

ID

IDM

6.0

18

A

Gate-to-Source Voltage － Continue

－

Non-repetitive

VGS

VGSM

±20

±40

V

Total Power Dissipation

TO-220

TO-220FP

PD

125

45

W

Operating and Storage Temperature Range

TJ, TSTG

-55 to 150

℃

Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃

(VDD = 100V, VGS = 10V, IL = 6A, L = 10mH, RG = 25Ω)

EAS

180

mJ

Thermal Resistance － Junction to Case

－

Junction to Ambient

θJC

θJA

1.0

62.5

℃

/W

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

TL

260

℃

(1) VDD = 50V, ID = 6A

(2) Pulse Width and frequency is limited by TJ(max) and thermal response

ORDERING INFORMATION

Part Number

Package

CMT06N60N220

TO-220

CMT06N60N220FP

TO-220FP

TEST CIRCUIT

Test Circuit – Avalanche Capability

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