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CGY2014ATW Datasheet(PDF) 6 Page - NXP Semiconductors |
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CGY2014ATW Datasheet(HTML) 6 Page - NXP Semiconductors |
6 / 12 page 2000 Nov 28 6 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2014ATW AC CHARACTERISTICS VDD1 = 2.8 V; VDD2 =VDD3 = 3.5 V; Tamb =25 °C; measured on the Philips application diagram (see Fig.3). Notes 1. The device is adjusted to provide nominal load power into a 50 Ω load. The device is switched off and a 6 : 1 load replaces the 50 Ω load. The device is switched on and the phase of the 6 : 1 load is varied 360 electrical degrees during a 60 seconds test period. 2. The power amplifier can be matched to PCS and/or DCS/PCS operation through optimization of the matching circuit; see Application Note (tbf). 3. Isolation can be improved to −20 dBm (typical) with a pin diode switched in the DCS output matching circuit. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Low band: GSM power amplifier Pi(LB) input power 3 5 7 dBm fRF(LB) RF frequency range 880 − 915 MHz Po(LB)(max) maximum output power 34.5 35 − dBm η LB efficiency 50 55 − % Po(LB)(min) minimum output power VDD =0V; Pi(LB) = 5 dBm −−30 − dBm NRX(LB) output noise in RX band Pi(LB) = 5 dBm fRF = 925 to 935 MHz −−−117 dBm/Hz fRF = 935 to 960 MHz −−−129 dBm/Hz H2LB 2nd harmonic level Pi(LB) = 5 dBm −−−35 dBc H3LB 3rd harmonic level Pi(LB) = 5 dBm −−−35 dBc StabLB stability Pi(LB) = 5 dBm; note 1 −−−60 dBc High band: DCS/PCS power amplifier; note 2 Pi(HB) input power 3 5 7 dBm fRF(HB) RF frequency range for DCS operation 1710 − 1785 MHz Po(HB)(max) maximum output power 32 32.5 − dBm ηHB efficiency 38 40 − % Po(HB)(min) minimum output power VDD =0V; Pi(HB) = 5 dBm −−30 − dBm α HB high band isolation when low band is operating VDD(LB) = 3.5 V; Pi(LB) = 5 dBm; VDD(HB) =0V; Pi(HB) = 5 dBm; note 3 − 0 − dBm NRX(HB) output noise in RX band Pi(HB) = 5 dBm −−−121 dBm/Hz H2HB 2nd harmonic level Pi(HB) = 5 dBm −−−35 dBc H3HB 3rd harmonic level Pi(HB) = 5 dBm −−−35 dBc StabHB stability Pi(HB) = 5 dBm; note 1 −−−60 dBc |
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