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BZT03-C160 Datasheet(PDF) 7 Page - NXP Semiconductors |
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BZT03-C160 Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 9 page 1996 Jun 11 7 Philips Semiconductors Product specification Voltage regulator diodes BZT03 series GRAPHICAL DATA Fig.2 Maximum total power dissipation as a function of temperature. Solid line: tie-point temperature; lead length = 10 mm. Dotted line: ambient temperature; PCB mounted as shown in Fig 6. handbook, halfpage 0 200 4 3 1 0 2 100 T ( °C) Ptot (W) MBH534 Tj =25 °C prior to surge. Fig.3 Maximum non-repetitive peak reverse power dissipation as a function of pulse duration (square pulse). handbook, halfpage 10−2 10 102 103 104 10−1 1tp (ms) PZSM (W) 10 MBH535 Fig.4 Non-repetitive peak reverse current pulse definition. In accordance with “IEC 60-1, Section 8”. t1 =10 µs. t2 = 1000 µs. handbook, halfpage MGD521 IRSM (%) 100 90 50 10 t1 t2 t Tj =25 °C. Fig.5 Forward current as a function of forward voltage; typical values. handbook, halfpage 02 3 0 1 2 MBH536 IF (A) 1 VF (V) |
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Similar Description - BZT03-C160 |
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