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AP2202K-2.7TR Datasheet(PDF) 11 Page - BCD Semiconductor Manufacturing Limited |
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AP2202K-2.7TR Datasheet(HTML) 11 Page - BCD Semiconductor Manufacturing Limited |
11 / 33 page 150mA RF ULDO REGULATOR AP2202 Data Sheet 11 Mar. 2007 Rev. 1. 7 BCD Semiconductor Manufacturing Limited Electrical Characteristics (Continued) AP2202-2.6 Electrical Characteristics Parameter Symbol Conditions Min Typ Max Unit Enable Input Logic-High Voltage VIH Regulator enabled 2.0 V Enable Input Logic-Low Current IIL VIL≤0.4V 0.01 1 µA VIL≤0.18V 2 Enable Input Logic-High Current IIH VIH≥2.0V 5 20 µA VIH≥2.0V 25 Note 2: Specifications in bold type are limited to -40oC ≤T J≤125 oC. Limits over temperature are guaranteed by design, but not tested in production. Note 3: Output voltage temperature coefficient is defined as the worst case voltage change divided by the total temperature range. Note 4: Regulation is measured at constant junction temperature using low duty cycle pulse testing. Parts are tested for load regulation in the load range from 0.1mA to 150mA. Changes in output voltage due to heating effects are covered by the thermal regulation specification. Note 5: Dropout voltage is defined as the input to output differential at which the output voltage drops 1% (TJ=25 oC) or 2% (- 40oC ≤T J≤125 oC) below its nominal value measured at 1V differential. Note 6: Ground pin current is the regulator quiescent current plus pass transistor base current. The total current drawn from the supply is the sum of the load current plus the ground pin current. VIN=3.6V, IOUT=100µA, CIN=1.0µF, COUT=2.2µF, VEN≥2.0V, TJ=25 oC, Bold typeface applies over -40oC ≤T J≤125 oC (note 2), unless otherwise specified. |
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