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BSR13 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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BSR13 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 4 page ©2004 Fairchild Semiconductor Corporation Rev. A, September 2004 Absolute Maximum Ratings* T a=25°C unless otherwise noted * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These rating are based on a maximum junction temperature of 150 degrees C. 2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics T a=25°C unless otherwise noted * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Symbol Parameter Ratings Units VCEO Collector-Emitter Voltage 30 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 0.5 A TJ, TSTG Operating and Storage Junction Temperature Range -55 ~ 150 °C Symbol Parameter Test Condition Min. Max. Units Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 10mA, IB = 0 30 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10µA, IC = 0 5.0 V ICBO Collector Cutoff Current VCB = 50V, IE = 0 VCB = 50V, IE = 0, Ta = 150°C 30 10 nA µA IEBO Emitter Cutoff Current VEB = 3.0V, IC = 0 15 nA On Characteristics hFE DC Current Gain IC = 0.1mA, VCE = 10V IC = 1.0mA, VCE = 10V IC = 10mA, VCE = 10V IC = 150mA, VCE = 10V * IC = 150mA, VCE = 1.0V * IC = 500mA, VCE = 10V * 35 50 75 100 50 30 300 VCE(sat) Collector-Emitter Saturation Voltage * IC = 150mA, IB = 15V IC = 500mA, IB = 50V 0.4 1.6 V VBE(sat) Base-Emitter Saturation Voltage IC = 150mA, IB = 15V IC = 500mA, IB = 50V 1.3 2.6 V Small Signal Characteristics fT Curent Gain Bandwidth Product IC = 20mA, VCE = 20V, f = 100MHz 250 BSR13 NPN General Purpose Amplifier • Sourced from process 10. SOT-23 B E C Mark: U7 |
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