Electronic Components Datasheet Search
Selected language     English  ▼


BSS79C Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. BSS79C
Description  NPN General Purpose Amplifier
Download  4 Pages
Scroll/Zoom Zoom In 100% Zoom Out
Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
Logo 

   
 1 page
background image
©2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
Absolute Maximum Ratings * T
a=25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Electrical Characteristics T
a=25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
Collector-Emitter Voltage
40
V
VCBO
Collector-Base Voltage
75
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current
- Continuous
800
mA
TJ, TSTG
Operating and Storage Junction Temperature Range
-55 ~ +150
°C
Symbol
Parameter
Test Condition
Min.
Max.
Units
Off Characteristics
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC = 10mA, IB = 0
75
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10µA, IE = 0
40
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10µA, IC = 0
6.0
V
ICBO
Collector-Cutoff Current
VCB = 60V
VCB = 60V, Ta = 150°C
10
10
nA
µA
IEBO
Emitter-Cutoff Current
VEB = 3.0V, IC = 0
10
nA
On Characteristics *
hFE
DC Current Gain
IC = 150mA, VCE = 10V
100
300
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 150mA, IB = 15mA
IC = 500mA, IB = 50mA
0.3
1.0
V
V
Small Signal Characteristics
fT
Current Gain - Bandwidth Product
IC = 20mA, VCE = 20V, f = 100MHz
250
MHz
CCB
Collector-Base Capacitance
VCB = 10V, IE = 0, f = 1.0MHz
8.0
pF
Switching Characteristics
td
Delay Time
VCC = 30V, VBE(OFF) = 0.5V,
IC = 150mA, IB1 = 15mA
10
ns
tr
Rise Time
10
ns
ts
Storage Time
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
265
ns
tf
Fall Time
60
ns
BSS79C
NPN General Purpose Amplifier
• This device is for use as a medium power amplifier and swith requiring
collector currents up to 500mA.
• Sourced from process 19.
• See BCW65C for characteristics.
SOT-23
B
E
C
Mark: CF




Html Pages

1  2  3  4 


Datasheet Download



Related Electronics Part Number

Part NumberComponents DescriptionHtml ViewManufacturer
2N5551NPN General Purpose Amplifier 1 2 3 4 5 Fairchild Semiconductor
2N3904NPN GENERAL PURPOSE AMPLIFIER 1 2 3 Unisonic Technologies
MMBT2222ANPN GENERAL PURPOSE AMPLIFIER 1 2 3 4 5 MoreUnisonic Technologies
2N4401NPN GENERAL PURPOSE AMPLIFIER 1 2 3 4 5 MoreUnisonic Technologies
MMBT5088NPN GENERAL PURPOSE AMPLIFIER 1 2 3 4 5 MoreUnisonic Technologies
MMBT4401NPN GENERAL PURPOSE AMPLIFIER 1 2 3 4 5 MoreUnisonic Technologies
BCV71NPN General Purpose Amplifier 1 2 3 Fairchild Semiconductor
2N5088NPN GENERAL PURPOSE AMPLIFIER 1 2 3 4 5 MoreUnisonic Technologies
2SC4617_04NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 1 2 3 4 ON Semiconductor
IT120Dual NPN General Purpose Amplifier 1 2 Intersil Corporation

Link URL

Does ALLDATASHEET help your business so far?  [ DONATE ]  

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Bookmark   |   Link Exchange   |   Manufacturer List
All Rights Reserved© Alldatasheet.com 2003 - 2017    


Mirror Sites
English : Alldatasheet.com  , Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp  |   Russian : Alldatasheetru.com
Korean : Alldatasheet.co.kr   |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com  |   Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl