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AP3844GP Datasheet(PDF) 6 Page - BCD Semiconductor Manufacturing Limited |
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AP3844GP Datasheet(HTML) 6 Page - BCD Semiconductor Manufacturing Limited |
6 / 13 page GREEN MODE PWM CONTROLLER AP384XG Data Sheet 6 Aug. 2005 Rev. 1. 2 BCD Semiconductor Manufacturing Limited Parameter Symbol Conditions Min Typ Max Unit ERROR AMPLIFIER SECTION Input Voltage VI VCOMP=2.5V 2.45 2.50 2.55 V Output Sink Current ISINK VCOMP=1.1V 6 10 mA Output Source Current ISOURCE VCOMP=5V -0.5 -0.8 mA High Output Voltage VOH RL=15kΩ to GND 5 7 V Low Output Voltage VOL RL=15kΩ to pin REF 0.7 1.1 V Voltage Gain 2V ≤ V O ≤ 4V 65 90 dB Power Supply Rejection Ratio PSRR 12V ≤ V CC ≤ 25V 60 70 dB CURRENT SENSE SECTION Maximum Input Signal VI(MAX) VCOMP=5V (Note 5) 0.9 1 1.1 V Gain GV 0V ≤ V CS ≤ 4V (Note 5, 6) 2.85 3 3.15 V/V Power Supply Rejection Ratio PSRR 12V ≤ V CC ≤ 25V (Note 5, 7) 70 dB Delay to Output VCS= 0 to 2V (Note 7) 150 250 ns Input Bias Current IBIAS VOUTPUT=High -3 -10 µA Leading Edge Blanking Duration TLEB 250 ns OUTPUT SECTION Low Output Voltage VOL ISINK = 20mA 0.2 0.4 V ISINK = 200mA 1.4 2.2 V High Output Voltage VOH ISOURCE = 20mA 13 13.5 V ISOURCE = 200mA 12 13 V Rise Time tR TJ=25 oC, C L=1nF 150 250 ns Fall Time tF TJ=25 oC, C L=1nF 50 150 ns SKIP CYCLE MODE SECTION Source Current (@ CS) VOUTPUT=Low, TJ=25 oC 180 200 220 µA OVER-TEMPERATURE PROTECT SECTION Shutdown Temperature TSHUT 155 oC Temperature Hysteresis THYS 25 oC A= , 0 ≤ Vpin3 ≤ 0.8V ∆VPin 3 Note 5: Parameters are tested at trip point of latch with Vpin2 = 0. Note 6: Here gain is defined as: ∆VPin 1 Note 7: These parameters, although guaranteed, are not 100% tested in production. Electrical Characteristics (Continued) |
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