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FCB20N60FTM Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FCB20N60FTM Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page ©2006 Fairchild Semiconductor Corporation 1 www. f airchildsemi. com FCB20N60F Rev.A2 December 2006 SuperFET TM FCB20N60F 600V N-CHANNEL FRFET Features • 650V @ TJ =150°C • Typ.Rds(on)=0. 15 • Fast RecoveryType (trr =160ns) • Ultra low gate charge (typ.Qg=75nC) • Low ef f ective output capacitance (typ.Coss. ef f =165pF) • 100% avalanche tested Descri pti on SuperFETTM is,Farichild’ s proprietary,new generation ofhigh voltage MOSFET f amily that is utilizing an advanced charge balance mechanism f or outstanding low on-resistance and lower gate charge perf ormance. This advanced technology has been tailored to minimize conduction loss,provide superior switching perf ormance,and withstand extreme dv/ dt rate and higher avalanche energy. Consequently,SuperFET is very suitable f or various AC/ DC power conversion in switching mode operation f or system miniaturization and higher ef f iciency. G S D D G S Absol uteMaxi m um Rati ngs Sym bol Param eter FCB20N60F Uni t VDSS Drain-Source Voltage 600 V ID Drain Current -Continuous(TC =25 C) -Continuous(TC =100 C) 20 12. 5 A A IDM Drain Current -Pulsed (Note 1) 60 A VGSS Gate-Source voltage 30 V EAS Single Pulsed Avalanche Energy (Note 2) 690 mJ IAR Avalanche Current (Note 1) 20 A EAR Repetitive Avalanche Energy (Note 1) 20. 8 mJ dv/ dt PeakDiode Recoverydv/ dt (Note 3) 50 V/ ns PD Power Dissipation (TC =25 C) -Derate above 25 C 208 1. 67 W W/C TJ,TSTG Operatingand Storage Temperature Range -55to +150 C TL Maximum Lead Temperature f or SolderingPurpose, 1/ 8”f rom Case f or 5Seconds 300 C Therm alCharacteri sti cs Sym bol Param eter FCB20N60F Unit R JC Thermal Resistance,Junction-to-Case 0. 6 C/ W R JA* Thermal Resistance,Junction-to-Ambient* 40 C/ W R JA Thermal Resistance,Junction-to-Ambient 62. 5 C/ W * When mounted on the minimum pad size recommended (PCB Mount) |
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