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AH266Z4-E1 Datasheet(PDF) 5 Page - BCD Semiconductor Manufacturing Limited |
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AH266Z4-E1 Datasheet(HTML) 5 Page - BCD Semiconductor Manufacturing Limited |
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5 / 11 page  HIGH VOLTAGE HALL EFFECT LATCH AH266 Data Sheet 5 Feb. 2007 Rev. 1. 1 BCD Semiconductor Manufacturing Limited Parameter Symbol Test Condition Min Typ Max Unit Low Supply Voltage VCE VCC=5V, IO=100mA 0.8 1.1 V Output Saturation Voltage VSAT1IO=500mA 1.1 1.5 V Output Saturation Voltage VSAT2IO=300mA 0.9 1.25 V Output Leakage Current IOL VDO, VDOB=24V 0.1 10 µA Supply Current ICC VCC=24V, Output Open 3.5 6 mA Output Rise Time tr RL=820Ω, CL=20pF 3.0 10 µs Output Fall Time tf RL=820Ω, CL=20pF 0.3 1.5 µs Switch Time Differential ∆tR L=820Ω, CL=20pF 3.0 10 µs Output Zener Breakdown Voltage VZO 61 V (TA=25 oC, V CC=24V, unless otherwise specified) Electrical Characteristics Parameter Symbol Grade Min Typ Max Unit Operating Point BOP A10 70 Gauss B 100 Gauss Releasing Point BRP A-70 -10 Gauss B -100 Gauss Hysteresis BHYS 80 Gauss Magnetic Characteristics (TA=25 oC) V DO (V) High Low B HYS V SAT 0 S N B RP B OP Off-state On-state Turn off Turn on Magnetic Flux Density (Gauss) |
Similar Part No. - AH266Z4-E1 |
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