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AH211Z4-AE1 Datasheet(PDF) 5 Page - BCD Semiconductor Manufacturing Limited

Part # AH211Z4-AE1
Description  TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
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Manufacturer  BCDSEMI [BCD Semiconductor Manufacturing Limited]
Direct Link  http://www.bcdsemi.com
Logo BCDSEMI - BCD Semiconductor Manufacturing Limited

AH211Z4-AE1 Datasheet(HTML) 5 Page - BCD Semiconductor Manufacturing Limited

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TWO PHASE HALL EFFECT LATCH WITH FG OUTPUT
AH211
5
Mar. 2007 Rev. 1.3
BCD Semiconductor Manufacturing Limited
Data Sheet
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Output Saturation Voltage
VSAT
B>150Gauss, VCC=3.5V,
VDOB=VCC, IDO=100mA
(or B<-150Gauss, VCC=3.5V,
VDO=VCC, IDOB=100mA)
1.1
V
B>150Gauss,
VDOB=VCC, IDO=400mA
(or B<-150Gauss, VDO=VCC,
IDOB=400mA)
1.05
1.3
V
FG Saturation Voltage
VSATF
B<-150Gauss, VDO=VCC,
IFG=20mA
0.35
0.6
V
FG Leakage Current
IOLF
B>150Gauss, VDOB=VCC,
VFG=16V
0.1
10
µA
Supply Current
ICC
B>150Gauss, VDOB=VCC,
(or B<-150Gauss, VDO=VCC )
810
mA
Output Rise Time
tr
RL=1kΩ, CL=10pF
3.0
10
µs
Output Fall Time
tf
RL=1kΩ, CL=10pF
0.3
1.0
µs
Switch Time Differential
∆tR
L=1kΩ, CL=10pF
3.0
10
µs
Output Zener Breakdown Voltage
VZ
55
V
(TA=25
oC, V
CC=14V, unless otherwise specified)
Electrical Characteristics
Parameter
Symbol
Grade
Min
Typ
Max
Unit
Operating Point
BOP
A
5
30
60
Gauss
B90
Gauss
Releasing Point
BRP
A-60
-30
-5
Gauss
B
-90
Gauss
Hysteresis
BHYS
60
Gauss
Magnetic Characteristics
(TA=25
oC)


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