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FDFMA2P857 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
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FDFMA2P857 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
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2 / 8 page  FDFMA2P857 Rev.B www.fairchildsemi.com 2 Electrical Characteristics T J = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = –250μA, VGS = 0V –20 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = –250μA, referenced to 25°C –12 mV/°C IDSS Zero Gate Voltage Drain Current VDS = –16V, VGS = 0V –1 μA IGSS Gate to Source Leakage Current VGS = ±8V, VDS = 0V ±100 nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = –250μA –0.4 –0.7 –1.3 V ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = –250μA, referenced to 25°C 2 mV/°C rDS(on) Static Drain to Source On Resistance VGS = –4.5V, ID = –3.0A 90 120 m Ω VGS = –2.5V, ID = –2.5A 120 160 VGS = –1.8V, ID = –1.0A 172 240 VGS = –4.5V, ID = –3.0A, TJ = 125°C 118 160 gFS Forward Transconductance VDS = –5V, ID = –3.0A 7 S Dynamic Characteristics Ciss Input Capacitance VDS = –10V, VGS = 0V, f = 1.0MHz 435 pF Coss Output Capacitance 80 pF Crss Reverse Transfer Capacitance 45 pF Switching Characteristics td(on) Turn-On Delay Time VDD = –10V, ID = –1A VGS = –4.5V, RGEN = 6Ω 9 18 ns tr Rise Time 11 19 ns td(off) Turn-Off Delay Time 15 27 ns tf Fall Time 6 12 ns Qg(TOT) Total Gate Charge VDS = –10V ID = –3.0A VGS = –4.5V 4 6 nC Qgs Gate to Source Gate Charge 0.8 nC Qgd Gate to Drain “Miller” Charge 0.9 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current –1.1 A VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.1A (Note 2) –0.8 –1.2 V trr Reverse Recovery Time IF = –3.0A, di/dt = 100A/μs 17 ns Qrr Reverse Recovery Charge 6 nC Schottky Diode Characteristics IR Reverse Leakage VR = 10V TJ = 25°C 0.5 4.5 μA TJ = 85°C 0.05 1.0 mA TJ = 125°C 0.6 8.4 mA IR Reverse Leakage VR = 20V TJ = 25°C 1.1 8.0 μA TJ = 85°C 0.09 1.6 mA TJ = 125°C 0.9 10 mA VF Forward Voltage IF = 100mA TJ = 25°C 0.37 0.40 V TJ = 85°C 0.29 0.35 V TJ = 125°C 0.23 0.29 V VF Forward Voltage IF = 1A TJ = 25°C 0.5 0.54 V TJ = 85°C 0.46 0.51 V TJ = 125°C 0.43 0.48 V |
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