Electronic Components Datasheet Search |
|
FDP18N50 Datasheet(PDF) 2 Page - Fairchild Semiconductor |
|
FDP18N50 Datasheet(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page 2 www.fairchildsemi.com FDP18N50 / FDPF18N50 Rev. A Package Marking and Ordering Information Electrical Characteristics T C = 25°C unless otherwise noted NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 5.2mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics Device Marking Device Package Reel Size Tape Width Quantity FDP18N50 FDP18N50 TO-220 - - 50 FDPF18N50 FDPF18N50 TO-220F - - 50 Symbol Parameter Conditions Min. Typ. Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID = 250µA 500 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250µA, Referenced to 25°C-- 0.5 -- V/ °C IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V VDS = 400V, TC = 125°C -- -- -- -- 1 10 µA µA IGSSF Gate-Body Leakage Current, Forward VGS = 30V, VDS = 0V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30V, VDS = 0V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA3.0 -- 5.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10V, ID = 9A -- 0.220 0.265 Ω gFS Forward Transconductance VDS = 40V, ID = 9A (Note 4) -- 25 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz -- 2200 2860 pF Coss Output Capacitance -- 330 430 pF Crss Reverse Transfer Capacitance -- 25 40 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 250V, ID = 18A RG = 25Ω (Note 4, 5) -- 55 120 ns tr Turn-On Rise Time -- 165 340 ns td(off) Turn-Off Delay Time -- 95 200 ns tf Turn-Off Fall Time -- 90 190 ns Qg Total Gate Charge VDS = 400V, ID = 18A VGS = 10V (Note 4, 5) -- 45 60 nC Qgs Gate-Source Charge -- 12.5 -- nC Qgd Gate-Drain Charge -- 19 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 18 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 72 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 18A -- -- 1.4 V trr Reverse Recovery Time VGS = 0V, IS = 18A dIF/dt =100A/µs (Note 4) -- 500 -- ns Qrr Reverse Recovery Charge -- 5.4 -- µC |
Similar Part No. - FDP18N50 |
|
Similar Description - FDP18N50 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |