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ED1402E Datasheet(PDF) 3 Page - NXP Semiconductors |
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ED1402E Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page  1999 Apr 27 3 Philips Semiconductors Product specification NPN general purpose transistor ED1402 THERMAL CHARACTERISTICS Note 1. Refer to TO-92; SOT54 standard mounting conditions. CHARACTERISTICS Tamb =25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 µs; δ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 250 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB =30V − 15 nA IE = 0; VCB = 30 V; Tj = 150 °C − 5 µA IEBO emitter cut-off current IC = 0; VEB =5V − 100 nA hFE DC current gain IC = 2 mA; VCE =5V ED1402B 150 225 ED1402C 202 318 ED1402D 290 450 ED1402E 410 810 VBE base-emitter voltage IC = 2 mA; VCE = 5 V; note 1 − 770 mV Cc collector capacitance IE =ie = 0; VCB =10V; f=1MHz − 5pF fT transition frequency IC = 1 mA; VCE = 10 V; f = 100 MHz 100 − MHz |
Similar Part No. - ED1402E |
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Similar Description - ED1402E |
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