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FDY4000CZ Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDY4000CZ Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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1 / 9 page  tm August 2006 ©2006 Fairchild Semiconductor Corporation FDY4000CZ Rev. B www.fairchildsemi.com 1 FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel Max rDS(on) = 0.7Ω at VGS = 4.5V, ID = 600mA Max rDS(on) = 0.85Ω at VGS = 2.5V, ID = 500mA Max rDS(on) = 1.25Ω at VGS = 1.8V, ID =150 mA Q2: P-Channel Max rDS(on) = 1.2Ω at VGS = -4.5V, ID = -350mA Max rDS(on) = 1.6Ω at VGS = -2.5V, ID = -300mA Max rDS(on) = 2.7Ω at VGS = -1.8V, ID = -150mA ESD protection diode (note 3) RoHS Compliant General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS= 2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications Level shifting Power Supply Converter Circuits Load/Power Switching Cell Phones, Pagers MOSFET Maximum Ratings T C = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Q1 Q2 Units VDS Drain to Source Voltage 20 -20 V VGS Gate to Source Voltage ±12 ±8 V ID Drain Current -Continuous (Note 1a) 600 -350 mA -Pulsed 1000 -1000 PD Power Dissipation (Steady State) (Note 1a) (Note 1b) 625 mW 446 TJ, TSTG Operating and Storage Jaunting Temperature Range -55 to 150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1a) 200 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1b) 280 Device Marking Device Package Reel Size Tape Width Quantity E FDY4000CZ SC89-6 7” 8mm 3000units 1 2 3 4 5 6 S2 G1 D1 4 6 2 3 1 5 S1 G2 D2 |
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