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FDZ493P Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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FDZ493P Datasheet(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page tm November 2006 ©2006 Fairchild Semiconductor Corporation FDZ493P Rev.B(W) www.fairchildsemi.com 1 FDZ493P P-Channel 2.5V Specified PowerTrench® BGA MOSFET –20V, –4.6A, 46mΩ Features Max rDS(on) = 46mΩ at VGS = –4.5V, ID = –4.6A Max rDS(on) = 72mΩ at VGS = –2.5V, ID = –3.6A Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of SSOT-6. Ultra-thin package: less than 0.80 mm height when mounted to PCB. Outstanding thermal transfer characteristics:4 times better than SSOT-6. Ultra-low Qg x rDS(on) figure-of-merit. RoHS Compliant. General Description Combining Fairchild's advanced 2.5V specified PowerTrench® process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low rDS(on). Application Battery management Load switch Battery protection MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage –20 V VGS Gate to Source Voltage ±12 V ID Drain Current -Continuous TA = 25°C (Note 1a) –4.6 A -Pulsed –10 PD Power Dissipation TA = 25°C (Note 1a) 1.7 W TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150 °C RθJA Thermal Resistance, Junction to Ambient (Note 1a) 72 °C/W Device Marking Device Reel Size Tape Width Quantity E FDZ493P 7’’ 8mm 3000 units BOTTOM TOP GATE S D G |
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