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FDZ493P Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part # FDZ493P
Description  P-Channel 2.5V Specified PowerTrench BGA MOSFET -20V, -4.6A, 46mohm
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDZ493P Datasheet(HTML) 1 Page - Fairchild Semiconductor

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tm
November 2006
©2006 Fairchild Semiconductor Corporation
FDZ493P Rev.B(W)
www.fairchildsemi.com
1
FDZ493P
P-Channel 2.5V Specified PowerTrench® BGA MOSFET
–20V, –4.6A, 46mΩ
Features
Max rDS(on) = 46mΩ at VGS = –4.5V, ID = –4.6A
Max rDS(on) = 72mΩ at VGS = –2.5V, ID = –3.6A
Occupies only 2.25 mm2 of PCB area. Less than 50% of the
area of SSOT-6.
Ultra-thin package: less than 0.80 mm height when mounted
to PCB.
Outstanding thermal transfer characteristics:4 times better
than SSOT-6.
Ultra-low Qg x rDS(on) figure-of-merit.
RoHS Compliant.
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench®
process with state of the art BGA packaging process, the
FDZ493P minimizes both PCB space and rDS(on). This BGA
MOSFET embodies a breakthrough in packaging technology
which enables the device to combine excellent thermal transfer
characteristics, high current handing capability,ultra-low profile
packaging, low gate charge, and low rDS(on).
Application
Battery management
Load switch
Battery protection
MOSFET Maximum Ratings T
A = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
Units
VDS
Drain to Source Voltage
–20
V
VGS
Gate to Source Voltage
±12
V
ID
Drain Current -Continuous
TA = 25°C
(Note 1a)
–4.6
A
-Pulsed
–10
PD
Power Dissipation
TA = 25°C
(Note 1a)
1.7
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
72
°C/W
Device Marking
Device
Reel Size
Tape Width
Quantity
E
FDZ493P
7’’
8mm
3000 units
BOTTOM
TOP
GATE
S
D
G


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