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CEB02N6 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CEB02N6 Datasheet(HTML) 3 Page - Chino-Excel Technology |
3 / 4 page CEP02N6/CEB02N6 CEI02N6/CEF02N6 4 - 4 VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature 2.5 2.0 1.5 1.0 0.5 0 0 2 4 8 6 10 12 3.0 V GS=5V V GS=10,9,8,7V V GS=6V 10 0 2 4 6 8 T J=150 C -55 C 25 C 10 -1 1.V DS=40V 2.Pulse Test 10 Ciss Coss Crss 600 500 400 300 200 100 0 0 5 10 15 20 25 2.2 1.9 1.6 1.3 1.0 0.7 0.4 V GS=10V I D=1A -100 -50 0 50 100 150 200 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 V DS=VGS I D=250µA -50 -25 0 25 50 75 100 125 150 VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature 0.4 0.6 0.8 1.0 10 0 10 -1 10 1 1.2 V GS=0V |
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