CEP09N6/CEB09N6

CEI09N6/CEF09N6

N-Channel Enhancement Mode Field Effect Transistor

FEATURES

High power and current handing capability.

TO-220 & TO-263 & TO-262 package & TO-220F full-pak for through hole.

Parameter

Symbol

Limit

Units

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

- Derate above 25 C

f

600

1.25

156

35

9

V

W

A

A

V

W/ C

4 - 34

S

G

D

G

S

D

CEB SERIES

TO-263(DD-PAK)

S

D

G

CEP SERIES

TO-220

CEF SERIES

TO-220F

S

D

G

Type

CEP09N6

CEF09N6

600V

600V

1.2

Ω

1.2

Ω

9A

10V

10V

0.38

50

CEB09N6

600V

1.2

Ω

9A

10V

Lead free product is acquired.

2002.July

http://www.cetsemi.com

CEI09N6

600V

1.2

Ω

9A

10V

S

D

G

CEI SERIES

TO-262(I2-PAK)

TO-220/263/262

TO-220F

Operating and Store Temperature Range

-55 to 150

9

500

A

mJ

C

Thermal Characteristics

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

Parameter

Symbol

Limit

Units

C/W

C/W

62.5

0.8

R

θJC

R

θJA

9

500

2.6

65