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CEB20P06 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEB20P06 Datasheet(HTML) 1 Page - Chino-Excel Technology |
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1 / 4 page  P-Channel Enhancement Mode Field Effect Transistor FEATURES -60V, -15A, RDS(ON) =105mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -60 0.37 56 -45 -15 ±20 V W A A V W/ C 4 - 62 S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 RDS(ON) =150mΩ @VGS = -4.5V. CEP20P06/CEB20P06 Lead free product is acquired. 2004.June http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 2.7 R θJC R θJA |
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