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CEB35P03 Datasheet(PDF) 1 Page - Chino-Excel Technology |
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CEB35P03 Datasheet(HTML) 1 Page - Chino-Excel Technology |
1 / 4 page P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) =36mΩ @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Units Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID PD IDM -30 0.48 71 -140 -35 ±20 V W A A V W/ C 1 S G D G S S D D G CEB SERIES TO-263(DD-PAK) CEP SERIES TO-220 RDS(ON) =57mΩ @VGS = -5V. CEP35P03/CEB35P03 Lead free product is acquired. Rev 2. 2005.May http://www.cetsemi.com Operating and Store Temperature Range TJ,Tstg -55 to 175 C Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Parameter Symbol Limit Units C/W C/W 62.5 2.1 R θJC R θJA |
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