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CEB50P03 Datasheet(PDF) 2 Page - Chino-Excel Technology |
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CEB50P03 Datasheet(HTML) 2 Page - Chino-Excel Technology |
2 / 4 page CEP50P03/CEB50P03 Electrical Characteristics T A = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 20 17 -1 -3 -100 100 -1 m Ω V nA nA µ A V S 2 Gate Body Leakage Current, Reverse On Characteristics c Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-Off Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -30 VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -25A VGS = -4.5V, ID = -20A VDS = -15V, ID = -25A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω VDS = -15V, ID = -25A, VGS = -5V VDS = -15V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -2.1A 2220 550 230 12 6 110 35 24 18 140 70 22 7 8 28 -2.1 -1.2 20 32 25 m Ω pF pF pF ns ns ns ns nC nC nC A V 5 5 Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. |
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