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CED4279 Datasheet(PDF) 3 Page - Chino-Excel Technology |
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CED4279 Datasheet(HTML) 3 Page - Chino-Excel Technology |
3 / 7 page CED4279/CEU4279 P-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Min Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Forward Transconductance c Gate Threshold Voltage Static Drain-Source On-Resistance BVDSS IDSS IGSSR IGSSF 72 60 -2 -4 -100 100 -1 mΩ V nA nA µ A V S 3 Gate Body Leakage Current, Reverse On Characteristics Dynamic Characteristics d Input Capacitance Reverse Transfer Capacitance Output Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Fall Time Turn-Off Delay Time Turn-On Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c Test Condition VGS = 0V, ID = -250µA VGS(th) RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Typ Max -40 VDS = -40V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V VGS = VDS, ID = -250µA VGS = -10V, ID = -8A VGS = -4.5V, ID = -6A VDS = -5V, ID = -8A VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω VDS = -20V, ID = -4.5A, VGS = -4.5V VDS = -20V, VGS = 0V, f = 1.0 MHz VGS = 0V, IS = -1A 710 130 80 11 3 32 5 22 6 64 10 5.8 1.9 2.5 7.7 -8 -1.2 10 110 90 mΩ pF pF pF ns ns ns ns nC nC nC A V Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing. e.Calculated continuous current based on the maximum allowable junction temperature. Package limitation current=8A. gFS c |
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