©2002 Fairchild Semiconductor Corporation

Rev. A1, November 2002

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150

°C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

* Pulse Test: Pulse Width

≤ 300µs, Duty Cycle ≤ 1.0%

Symbol

Parameter

Value

Units

Collector-Emitter Voltage

100

V

Collector-Base Voltage

120

V

Emitter-Base Voltage

10

V

Collector Current

- Continuous

800

mA

Operating and Storage Junction Temperature Range

-55 ~ +150

°C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Off Characteristics

Collector-Emitter Breakdown Voltage*

100

V

Collector-Emitter Breakdown Voltage

120

V

Emitter-Base Breakdown Voltage

10

Collector Cutoff Current

0.1

µA

Emitter Cutoff Current

0.1

µA

On Characteristics*

DC Current Gain

5000

10000

Collector-Emitter Saturation Voltage

1.25

V

Base-Emitter On Voltage

1.8

V

Symbol

Parameter

Max.

Units

Total Device Dissipation

Derate above 25

°C

1000

8

mW

mW/

°C

Thermal Resistance, Junction to Case

50

°C/W

Thermal Resistance, Junction to Ambient

125

°C/W

ZTX614

NPN Darlington Transistor

• These device is designed for applications requiring extremely high

gain at collector currents to 0.5A and high breakdown voltage.

• Sourced from process 06.

C

B

E

TO-226