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SGA-9289 Datasheet(PDF) 3 Page - SIRENZA MICRODEVICES

Part # SGA-9289
Description  Medium Power Discrete SiGe Transistor
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Manufacturer  SIRENZA [SIRENZA MICRODEVICES]
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SGA-9289 Datasheet(HTML) 3 Page - SIRENZA MICRODEVICES

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Broomfield, CO 80021
3
EDS-101498 Rev G
SGA-9289 Medium Power Discrete SiGe Transistor
303 S. Technology Ct.
Phone: (800) SMI-MMIC
http://www.sirenza.com
-10
-5
0
5
10
15
20
25
0123
45678
-5
5
15
25
35
45
01
23
45
67
8
-60
-48
-36
-24
-12
0
De-embedded S-Parameters (Z
S=ZL=50 Ohms, VCE=5V, ICQ=270mA, 25°
°°°° C)
Frequency (GHz)
Frequency (GHz)
T = -40, 25, 85
°C
Insertion Gain & Isolation
Insertion Gain vs Temperature
S11 vs Frequency
S22 vs Frequency
Gain
Gmax
Isolation
0.0
0.2
0.5
1.0
2.0
5.0
0.2
0.5
1.0
2.0
5.0
inf
0.2
0.5
1.0
2.0
5.0
4 GHz
S11
5 GHz
1 GHz
50 MHz
3 GHz
2 GHz
8 GHz
0.0
0.2
0.5
1.0
2.0
5.0
0.2
0.5
1.0
2.0
5.0
inf
0.2
0.5
1.0
2.0
5.0
4 GHz
5 GHz
1 GHz
50 MHz
3 GHz
2 GHz
S22
8 GHz
Note: S-parameters are de-embedded to the device leads with Z
S=ZL=50Ω. The data represents typical performace of the device.
De-embedded s-parameters can be downloaded from our website (www.sirenza.com).
0
100
200
300
400
500
600
700
0
246
8
I
b = 0.2 - 2.0 mA , 0.2 mA steps
T=25
°°°°° C
DC-IV Curves
VCE (V)


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