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SLD-1083CZ Datasheet(PDF) 1 Page - SIRENZA MICRODEVICES |
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SLD-1083CZ Datasheet(HTML) 1 Page - SIRENZA MICRODEVICES |
1 / 5 page The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc. All worldwide rights reserved. 303 S. Technology Court, Phone: (800) SMI-MMIC http://www.sirenza.com Broomfield, CO 80021 1 EDS-104013 Rev F Case Flange = Ground ESD Protection Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high perfor- mance LDMOS transistor designed for operation from to 2700MHz. It is an excellent solution for applications requiring high linearity and effi- ciency at a low cost. The SLD-1083CZ is typically used in the design of driver stages for power amplifiers, repeaters, and RFID applica- tions.The power transistor is fabricated using Sirenza’s latest, high per- formance LDMOS II process. RF Specifications Symbol Parameter Unit Min Typ Max Frequency Frequency of Operation MHz - - 2700 Gain 3 Watt CW, 902-928MHz dB 18 19 - Efficiency Drain Efficiency at 3 Watt CW, 915MHz % 40 43 - IRL Input Return Loss, 3 Watt Output Power, 915MHz dB -9.5 -12 - Linearity 3rd Order IMD at 3 Watt PEP (Two Tone), 915MHz dBc - -30 -26 1dB Compression (P1dB), 915MHz Watt - 4 - IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-55dB dBm - 21 - IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth, ACPR=-45dB dBm - 29 - RTH Thermal Resistance (Junction-to-Case) ºC/W 11 SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package Product Features Applications • 4 Watt Output P 1dB • Single Polarity Supply Voltage • High Gain: 18 dB at 915 MHz • High Efficiency: 43% at 3W CW • XeMOS II LDMOS • Integrated ESD Protection, Class 1B • Base Station PA driver • Repeaters • RFID • Military Communication • GSM/CDMA Product Description Pb RoHS Compliant & Package Green Test Conditions VDS = 28.0V, IDQ = 50mA, TFlange = 25ºC Functional Schematic Diagram DC Specifications Symbol Parameter Unit Min Typical Max gm Forward Transconductance @ 30mA IDS mA / V 150 VGS Threshold IDS=3mA, VDS=28V Volts 4.2 VGS Quiescent IDS=50mA, VDS=28V Volts 3 4 5 VDS Breakdown 1mA VDS current Volts 65 Ciss Input Capacitance (Gate to Source) VGS=0V VDS=28V pF 5.2 Crss Reverse Capacitance (Gate to Drain) VGS=0V VDS=28V pF 0.2 Coss Output Capacitance (Drain to Source) VGS=0V VDS=28V pF 3.2 RDSon Drain to Source Resistance, VGS=10V VDS=250mV Ω 3.0 |
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