SLD-1083CZ datasheet(1/5 Pages) SIRENZA

Part #	SLD-1083CZ

Description	4 Watt Discrete LDMOS FET in Ceramic Package

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Manufacturer	SIRENZA [SIRENZA MICRODEVICES]

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The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or ommisions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such

information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices

303 S. Technology Court,

Phone: (800) SMI-MMIC

http://www.sirenza.com

Broomfield, CO 80021

1

EDS-104013 Rev F

Case Flange = Ground

ESD

Protection

Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high perfor-

mance LDMOS transistor designed for operation from to 2700MHz. It is

an excellent solution for applications requiring high linearity and effi-

ciency at a low cost. The SLD-1083CZ is typically used in the design of

driver stages for power amplifiers, repeaters, and RFID applica-

tions.The power transistor is fabricated using Sirenza’s latest, high per-

formance LDMOS II process.

RF Specifications

Symbol

Parameter

Unit

Min

Typ

Max

Frequency

Frequency of Operation

MHz

-

2700

Gain

3 Watt CW, 902-928MHz

dB

18

19

-

Efficiency

Drain Efficiency at 3 Watt CW, 915MHz

%

40

43

-

IRL

Input Return Loss, 3 Watt Output Power, 915MHz

dB

-9.5

-12

-

Linearity

3rd Order IMD at 3 Watt PEP (Two Tone), 915MHz

dBc

-

-30

-26

1dB Compression (P1dB), 915MHz

Watt

-

4

-

IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,

ACPR=-55dB

dBm

-

21

-

IS-95, 9 Ch Fwd, Offset=750KHz, ACPR Integrated Bandwidth,

ACPR=-45dB

dBm

-

29

-

RTH

Thermal Resistance (Junction-to-Case)

ºC/W

11

SLD-1083CZ

4 Watt Discrete LDMOS FET in

Ceramic Package

Product Features

Applications

• 4 Watt Output P

1dB

• Single Polarity Supply Voltage

• High Gain: 18 dB at 915 MHz

• High Efficiency: 43% at 3W CW

• XeMOS II LDMOS

• Integrated ESD Protection, Class 1B

• Base Station PA driver

• Repeaters

• RFID

• Military Communication

• GSM/CDMA

Product Description

Pb

RoHS Compliant

&

Package

Green

Test Conditions

VDS = 28.0V, IDQ = 50mA, TFlange = 25ºC

Functional Schematic Diagram

DC Specifications

Symbol

Parameter

Unit

Min

Typical

Max

gm

Forward Transconductance @ 30mA IDS

mA / V

150

VGS Threshold

IDS=3mA, VDS=28V

Volts

4.2

VGS Quiescent

IDS=50mA, VDS=28V

Volts

3

4

5

VDS Breakdown

1mA VDS current

Volts

65

Ciss

Input Capacitance (Gate to Source) VGS=0V VDS=28V

pF

5.2

Crss

Reverse Capacitance (Gate to Drain) VGS=0V VDS=28V

pF

0.2

Coss

Output Capacitance (Drain to Source) VGS=0V VDS=28V

pF

3.2

RDSon

Drain to Source Resistance, VGS=10V VDS=250mV

Ω

3.0

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